Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

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Most cited references 25

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Phase-field models in materials science

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Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

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Author and article information

Journal

Journal ID (publisher-id): APPLAB

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: May 30 2016

Publication date (Print): May 30 2016

Publication date (Electronic): June 03 2016

Volume: 108

Issue: 22

Page: 221906

Affiliations

[1 ] Materials Science Division, Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, California 94551, USA

[2 ] Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, 204 Rogers Hall, Corvallis, Oregon 97331, USA

Article

DOI: 10.1063/1.4953153

SO-VID: a1f10f9c-9d1f-4b20-8624-3d82db2e6541

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