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      Optimization-Based Contact Fault Alleviation in Deep Brain Stimulation Leads

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          Most cited references25

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          Memory enhancement and deep-brain stimulation of the entorhinal area.

          The medial temporal structures, including the hippocampus and the entorhinal cortex, are critical for the ability to transform daily experience into lasting memories. We tested the hypothesis that deep-brain stimulation of the hippocampus or entorhinal cortex alters memory performance. We implanted intracranial depth electrodes in seven subjects to identify seizure-onset zones for subsequent epilepsy surgery. The subjects completed a spatial learning task during which they learned destinations within virtual environments. During half the learning trials, focal electrical stimulation was given below the threshold that elicits an afterdischarge (i.e., a neuronal discharge that occurs after termination of the stimulus). Entorhinal stimulation applied while the subjects learned locations of landmarks enhanced their subsequent memory of these locations: the subjects reached these landmarks more quickly and by shorter routes, as compared with locations learned without stimulation. Entorhinal stimulation also resulted in a resetting of the phase of the theta rhythm, as shown on the hippocampal electroencephalogram. Direct hippocampal stimulation was not effective. In this small series, no adverse events associated with the procedure were observed. Stimulation of the entorhinal region enhanced memory of spatial information when applied during learning. (Funded by the National Institutes of Health and the Dana Foundation.).
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            Analysis of models for external stimulation of axons.

            F. Rattay (1986)
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              Analysis of a model for excitation of myelinated nerve.

              D McNeal (1976)
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                Author and article information

                Journal
                IEEE Transactions on Neural Systems and Rehabilitation Engineering
                IEEE Trans. Neural Syst. Rehabil. Eng.
                Institute of Electrical and Electronics Engineers (IEEE)
                1534-4320
                1558-0210
                January 2018
                January 2018
                : 26
                : 1
                : 69-76
                Article
                10.1109/TNSRE.2017.2769707
                96e0ad32-43fe-4db8-a35f-9107badeccfb
                © 2018
                History

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