Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes

Guo, Bingtian; Ahmed, Sheikh Z.; Xue, Xingjun; Rockwell, Ann-Kathryn; Ha, Jaedu; Lee, Seunghyun; Liang, Baolai; Jones, Andrew H; McArthur, J. Andrew; Kodati, Sri H.; Ronningen, Theodore J.; Krishna, Sanjay; Kim, Jong Su; Bank, Seth R.; Ghosh, Avik W.; Campbell, Joe C.

doi:10.1109/JLT.2022.3185417

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Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes

Author(s): Bingtian Guo ¹ , Sheikh Z. Ahmed ¹ , Xingjun Xue ¹ , Ann-Kathryn Rockwell ² , Jaedu Ha ³ , Seunghyun Lee ⁴ , Baolai Liang ⁵ , Andrew H. Jones ¹ , J. Andrew McArthur ² , Sri H. Kodati ⁴ , Theodore J. Ronningen ⁴ , Sanjay Krishna ⁴ , Jong Su Kim ³ , Seth R. Bank ² , Avik W. Ghosh ¹ , Joe C. Campbell ¹

Publication date (Print): September 1 2022

Journal: Journal of Lightwave Technology

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Most cited references 31

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Temperature dependence of the energy gap in semiconductors

Y.P. Varshni (1967)

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Band parameters for III–V compound semiconductors and their alloys

J R Meyer, I Vurgaftman, L. Ram-Mohan (2001)

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Ionization Rates of Holes and Electrons in Silicon

R. Batdorf, W. Wiegmann, C Lee … (1964)

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Bingtian Guo: (View ORCID Profile)

Sheikh Z. Ahmed: (View ORCID Profile)

Ann-Kathryn Rockwell: (View ORCID Profile)

Seunghyun Lee: (View ORCID Profile)

Andrew H. Jones: (View ORCID Profile)

J. Andrew McArthur: (View ORCID Profile)

Theodore J. Ronningen: (View ORCID Profile)

Sanjay Krishna: (View ORCID Profile)

Seth R. Bank: (View ORCID Profile)

Avik W. Ghosh: (View ORCID Profile)

Joe C. Campbell: (View ORCID Profile)

Journal

Title: Journal of Lightwave Technology

Abbreviated Title: J. Lightwave Technol.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0733-8724

ISSN (Electronic): 1558-2213

Publication date Created: September 1 2022

Publication date (Print): September 1 2022

Volume: 40

Issue: 17

Pages: 5934-5942

Affiliations

[1 ]Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA

[2 ]Department of Electrical and Computer Engineering, University of Texas, Austin, TX, USA

[3 ]Department of Physics, Yeungnam University, Gyeongsan, South Korea

[4 ]Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA

[5 ]California NanoSystems Institute, University of California, Los Angeles, CA, USA

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DOI: 10.1109/JLT.2022.3185417

SO-VID: 8faa4a88-35c8-470f-a092-9dbdecee3dac

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https://doi.org/10.15223/policy-029

https://doi.org/10.15223/policy-037

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Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes

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Most cited references 31

Temperature dependence of the energy gap in semiconductors

Band parameters for III–V compound semiconductors and their alloys

Ionization Rates of Holes and Electrons in Silicon

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