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      The effects of strain on intrasubband scattering rates in InP‐based strained‐layer quantum‐well lasers

      Author(s): , ,
      Publication date Created:
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Material parameters of In1−xGaxAsyP1−yand related binaries

          Sadao Adachi (1982)
          Article 0 comments Cited 247 times – based on 0 reviews     Review now
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            Electron theory of the optical properties of laser-excited semiconductors

            S. Schmitt-Rink, H. Haug (1984)
            Article 0 comments Cited 188 times – based on 0 reviews     Review now
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              Band-structure engineering for low-threshold high-efficiency semiconductor lasers

              A.R. Adams (1986)
              Article 0 comments Cited 177 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: December 1994
                Publication date (Print): December 1994
                Volume: 76
                Issue: 11
                Pages: 7399-7404
                Article
                DOI: 10.1063/1.357965
                SO-VID: 7f15b857-47b2-4a51-9181-de3a0a804e13
                Copyright © © 1994
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