A broadband near-infrared phosphor BaZrGe 3O 9:Cr 3+: luminescence and application for light-emitting diodes

Author(s): Dejian Hou ¹ ^, ² ^, ³ ^, ⁴ , Huihong Lin ⁵ ^, ² ^, ³ ^, ⁴ , Yi Zhang ¹ ^, ² ^, ³ ^, ⁴ , Jin-Yan Li ⁵ ^, ² ^, ³ ^, ⁴ , Hongliang Li ¹ ^, ² ^, ³ ^, ⁴ , Jianhong Dong ¹ ^, ² ^, ³ ^, ⁴ , Zhenxu Lin ¹ ^, ² ^, ³ ^, ⁴ , Rui Huang ¹ ^, ² ^, ³ ^, ⁴

Publication date (Electronic): 2021

Journal: Inorganic Chemistry Frontiers

Publisher: Royal Society of Chemistry (RSC)

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Abstract

A broadband NIR luminescence material BaZrGe ₃O ₉:Cr ³⁺ was designed, the crystal field parameters and Huang–Rhys factor were calculated to evaluate the luminescence. The potential application for NIR pc-LED was demonstrated.

Abstract

Recently, near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) have attracted considerable interest in the research field worldwide. As the key material, broadband NIR phosphors have become a research hotspot. Herein, a series of Cr ³⁺-doped BaZrGe ₃O ₉ phosphors were successfully designed via nonequivalent substitution. The phosphors exhibited a broadband emission extending from 700 nm to 1200 nm (FWHM = 159 nm) with a maximum of ∼830 nm in the first biological window. To optimize the luminescence properties, the relationships between the doping concentration and crystal structure, luminescence spectra, decay curves were discussed. More importantly, the crystal field parameters D _q, B and Huang–Rhys factor were calculated, and the results may provide insight into factors determining and modifying the luminescence properties of the materials. The persistent luminescence of Cr ³⁺ could also be realized, and the luminescence mechanism was proposed. Moreover, a pc-LED prototype was fabricated by combining the BaZrGe ₃O ₉:Cr ³⁺ phosphor with a blue LED chip, and the potential application for broadband NIR pc-LEDs was discussed.

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Is Open Access

Strategies to approach high performance in Cr 3+ -doped phosphors for high-power NIR-LED light sources

Zhenwei Jia, Chenxu Yuan, Yongfu Liu … (2020)

Broadband near-infrared (NIR)-emitting phosphors are key for next-generation smart NIR light sources based on blue LEDs. To achieve excellent NIR phosphors, we propose a strategy of enhancing the crystallinity, modifying the micromorphology, and maintaining the valence state of Cr3+ in Ca3Sc2Si3O12 garnet (CSSG). By adding fluxes and sintering in a reducing atmosphere, the internal quantum efficiency (IQE) is greatly enhanced to 92.3%. The optimized CSSG:6%Cr3+ exhibits excellent thermal stability. At 150 °C, 97.4% of the NIR emission at room temperature can be maintained. The fabricated NIR-LED device emits a high optical power of 109.9 mW at 520 mA. The performances of both the achieved phosphor and the NIR-LED are almost the best results until now. The mechanism for the optimization is investigated. An application of the NIR-LED light source is demonstrated.