Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates

Colace, L.; Assanto, G.; Luan, Hsin-Chiao; Kimerling, L. C.; Wada, K.; Masini, G

doi:10.1063/1.125993

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Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates

Author(s): L. Colace , G. Masini , G. Assanto , Hsin-Chiao Luan , K. Wada , L. C. Kimerling

Publication date Created: March 06 2000

Publication date (Print): March 06 2000

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Most cited references 10

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High-quality Ge epilayers on Si with low threading-dislocation densities

Kazumi Wada, Lionel Kimerling, Hsin-Chiao Luan … (1999)

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Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

S. B. Samavedam, C. W. Leitz, T. A. Langdo … (1998)

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Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

G Capellini, G. Assanto, F Galluzzi … (1998)

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Author and article information

Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: March 06 2000

Publication date (Print): March 06 2000

Volume: 76

Issue: 10

Pages: 1231-1233

Article

DOI: 10.1063/1.125993

SO-VID: 76f7728e-46ec-4efa-883d-572b9e140b55

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Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates

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Most cited references 10

High-quality Ge epilayers on Si with low threading-dislocation densities

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

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