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      Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

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          Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

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            Single-nanowire solar cells beyond the Shockley–Queisser limit

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              Self-assembled quantum dots in a nanowire system for quantum photonics.

              Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-assembly is a potentially more powerful strategy. However, present approaches often yield quantum dots with large optical linewidths, making reproducibility of their physical properties difficult. We present a versatile quantum-dot-in-nanowire system that reproducibly self-assembles in core-shell GaAs/AlGaAs nanowires. The quantum dots form at the apex of a GaAs/AlGaAs interface, are highly stable, and can be positioned with nanometre precision relative to the nanowire centre. Unusually, their emission is blue-shifted relative to the lowest energy continuum states of the GaAs core. Large-scale electronic structure calculations show that the origin of the optical transitions lies in quantum confinement due to Al-rich barriers. By emitting in the red and self-assembling on silicon substrates, these quantum dots could therefore become building blocks for solid-state lighting devices and third-generation solar cells.
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                Author and article information

                Contributors
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                Journal
                Nano Letters
                Nano Lett.
                American Chemical Society (ACS)
                1530-6984
                1530-6992
                April 14 2021
                April 05 2021
                April 14 2021
                : 21
                : 7
                : 3139-3145
                Affiliations
                [1 ]Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
                [2 ]Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
                [3 ]Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
                Article
                10.1021/acs.nanolett.1c00349
                33818097
                72a2fcdd-6ccf-42b8-802a-dec9b079ffe5
                © 2021

                https://creativecommons.org/licenses/by-nc-nd/4.0/

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