42
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      p-Type Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications

      review-article

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Highlights

          • Compared to the n-type two-dimensional (2D) semiconductors, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in potential applications. Here, the discovery and preparation of p-type 2D semiconductors are very important and meaningful.

          • This review presents a timely and in-depth overview on the preparation and applications of p-type 2D semiconductors, which would help the related researchers to grasp the dynamics of this field and thus lay the foundations for their potential application in electronics and optoelectronics.

          Abstract

          Two-dimensional (2D) materials are regarded as promising candidates in many applications, including electronics and optoelectronics, because of their superior properties, including atomic-level thickness, tunable bandgaps, large specific surface area, and high carrier mobility. In order to bring 2D materials from the laboratory to industrialized applications, materials preparation is the first prerequisite. Compared to the n-type analogs, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in practical applications such as complementary logic circuits. So far, many efforts have been made in the preparation of p-type 2D semiconductors. In this review, we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top–down and bottom–up strategies. Then, we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their superiorities. In end, we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors, their controlled mass preparation, compatible engineering with silicon production line, high- κ dielectric materials, to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic devices. Overall, we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics.

          Related collections

          Most cited references179

          • Record: found
          • Abstract: found
          • Article: not found

          Electric Field Effect in Atomically Thin Carbon Films

          We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            Unconventional superconductivity in magic-angle graphene superlattices

              Bookmark
              • Record: found
              • Abstract: found
              • Article: not found

              Correlated insulator behaviour at half-filling in magic-angle graphene superlattices

              A van der Waals heterostructure is a type of metamaterial that consists of vertically stacked two-dimensional building blocks held together by the van der Waals forces between the layers. This design means that the properties of van der Waals heterostructures can be engineered precisely, even more so than those of two-dimensional materials. One such property is the 'twist' angle between different layers in the heterostructure. This angle has a crucial role in the electronic properties of van der Waals heterostructures, but does not have a direct analogue in other types of heterostructure, such as semiconductors grown using molecular beam epitaxy. For small twist angles, the moiré pattern that is produced by the lattice misorientation between the two-dimensional layers creates long-range modulation of the stacking order. So far, studies of the effects of the twist angle in van der Waals heterostructures have concentrated mostly on heterostructures consisting of monolayer graphene on top of hexagonal boron nitride, which exhibit relatively weak interlayer interaction owing to the large bandgap in hexagonal boron nitride. Here we study a heterostructure consisting of bilayer graphene, in which the two graphene layers are twisted relative to each other by a certain angle. We show experimentally that, as predicted theoretically, when this angle is close to the 'magic' angle the electronic band structure near zero Fermi energy becomes flat, owing to strong interlayer coupling. These flat bands exhibit insulating states at half-filling, which are not expected in the absence of correlations between electrons. We show that these correlated states at half-filling are consistent with Mott-like insulator states, which can arise from electrons being localized in the superlattice that is induced by the moiré pattern. These properties of magic-angle-twisted bilayer graphene heterostructures suggest that these materials could be used to study other exotic many-body quantum phases in two dimensions in the absence of a magnetic field. The accessibility of the flat bands through electrical tunability and the bandwidth tunability through the twist angle could pave the way towards more exotic correlated systems, such as unconventional superconductors and quantum spin liquids.
                Bookmark

                Author and article information

                Contributors
                tanglei@sslab.org.cn
                jyzou2021@usts.edu.cn
                Journal
                Nanomicro Lett
                Nanomicro Lett
                Nano-Micro Letters
                Springer Nature Singapore (Singapore )
                2311-6706
                2150-5551
                18 October 2023
                18 October 2023
                December 2023
                : 15
                : 230
                Affiliations
                [1 ]Songshan Lake Materials Laboratory, ( https://ror.org/020vtf184) Dongguan, 523808 Guangdong People’s Republic of China
                [2 ]Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, ( https://ror.org/04en8wb91) Suzhou, 215009 Jiangsu People’s Republic of China
                Article
                1211
                10.1007/s40820-023-01211-5
                10582003
                37848621
                6fa7df71-900c-4cc2-8d3c-4dad26688549
                © Shanghai Jiao Tong University 2023

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 4 May 2023
                : 4 September 2023
                Funding
                Funded by: Shanghai Jiao Tong University
                Categories
                Review
                Custom metadata
                © Shanghai Jiao Tong University 2023

                two-dimensional materials,p-type semiconductor,top–down,bottom–up,electronics,optoelectronics

                Comments

                Comment on this article