Gundlach oscillations and Coulomb blockade of Co nano-islands on
  MgO/Mo(100) investigated by scanning tunneling spectroscopy at 300 K

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Abstract

Ultrathin MgO films on Mo(100) with a thickness up to 12 ML are studied by scanning tunneling microscopy and spectroscopy at room temperature. The spatial variation of the work function within the MgO film is mapped by field emission resonance states (Gundlach oscillations) using dz/dU spectroscopy. We found circular spots with significantly reduced work function (DeltaPhi=0.6 eV), which are assigned to charged defects within the MgO film. On top of the MgO films, small Co cluster are deposited with an average contact area of 4 nm^2. These islands exhibit Coulomb oscillations in dI/dU spectra at room temperature. Good agreement with orthodox theory is achieved showing variations of the background charge Q_0 for islands at different positions, which are in accordance with the work function differences determined by the Gundlach oscillations.

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Large magnetic anisotropy of a single atomic spin embedded in a surface molecular network.

Cyrus Hirjibehedin, Chiung-Yuan Lin, Alexander Otte … (2007)

Magnetic anisotropy allows magnets to maintain their direction of magnetization over time. Using a scanning tunneling microscope to observe spin excitations, we determined the orientation and strength of the anisotropies of individual iron and manganese atoms on a thin layer of copper nitride. The relative intensities of the inelastic tunneling processes are consistent with dipolar interactions, as seen for inelastic neutron scattering. First-principles calculations indicate that the magnetic atoms become incorporated into a polar covalent surface molecular network in the copper nitride. These structures, which provide atom-by-atom accessibility via local probes, have the potential for engineering anisotropies large enough to produce stable magnetization at low temperatures for a single atomic spin.

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Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100).

Michael S. Bank, Eric S J Harris, Hai-rong Wang … (2005)

The spin polarization of current injected into GaAs from a CoFe/MgO(100) tunnel injector is inferred from the electroluminescence polarization from GaAs/AlGaAs quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52% at 100 K, and 32% at 290 K. We find a nonmonotonic temperature dependence of the polarization which can be attributed to spin relaxation in the quantum well detectors.