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      Hierarchical SnS 2/SnO 2 nanoheterojunctions with increased active-sites and charge transfer for ultrasensitive NO 2 detection

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          Abstract

          An ultrasensitive NO 2 sensing material was fabricated using ultrafine SnO 2 nanoparticle-modified hierarchical SnS 2 nanoflowers.

          Abstract

          SnS 2 nanosheets with unique properties are excellent candidate materials for fabricating high-performance NO 2 gas sensors. However, serious restacking and aggregation during sensor fabrication have greatly impacted the sensing response. In this study, flower-like hierarchical SnS 2 was prepared by a simple microwave method and partially thermally oxidized to form hierarchical SnS 2/SnO 2 nanocomposites to further improve the sensing performance at low operating temperature. The fabricated SnS 2/SnO 2 sensor exhibited ultrahigh response (resistance ratio = 51.1) toward 1 ppm NO 2 at 100 °C, roughly 10.2 times higher than that of pure SnS 2 nanoflowers. The excellent and enhanced NO 2 sensing performances of hierarchical SnS 2/SnO 2 nanocomposites were attributed to the novel hierarchical structure of SnS 2 and the nanoheterojunction between SnS 2 and the ultrafine SnO 2 nanoparticles. The SnS 2/SnO 2 sensors also exhibited excellent selectivity and reliable repeatability. The simple fabrication of high performance sensing materials may facilitate the large-scale production of NO 2 gas sensors.

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          Most cited references54

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          Graphene: status and prospects.

          A. K. Geim (2009)
          Graphene is a wonder material with many superlatives to its name. It is the thinnest known material in the universe and the strongest ever measured. Its charge carriers exhibit giant intrinsic mobility, have zero effective mass, and can travel for micrometers without scattering at room temperature. Graphene can sustain current densities six orders of magnitude higher than that of copper, shows record thermal conductivity and stiffness, is impermeable to gases, and reconciles such conflicting qualities as brittleness and ductility. Electron transport in graphene is described by a Dirac-like equation, which allows the investigation of relativistic quantum phenomena in a benchtop experiment. This review analyzes recent trends in graphene research and applications, and attempts to identify future directions in which the field is likely to develop.
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            Detection of individual gas molecules adsorbed on graphene

            The ultimate aim of any detection method is to achieve such a level of sensitivity that individual quanta of a measured entity can be resolved. In the case of chemical sensors, the quantum is one atom or molecule. Such resolution has so far been beyond the reach of any detection technique, including solid-state gas sensors hailed for their exceptional sensitivity. The fundamental reason limiting the resolution of such sensors is fluctuations due to thermal motion of charges and defects, which lead to intrinsic noise exceeding the sought-after signal from individual molecules, usually by many orders of magnitude. Here, we show that micrometre-size sensors made from graphene are capable of detecting individual events when a gas molecule attaches to or detaches from graphene's surface. The adsorbed molecules change the local carrier concentration in graphene one by one electron, which leads to step-like changes in resistance. The achieved sensitivity is due to the fact that graphene is an exceptionally low-noise material electronically, which makes it a promising candidate not only for chemical detectors but also for other applications where local probes sensitive to external charge, magnetic field or mechanical strain are required.
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              Sensing behavior of atomically thin-layered MoS2 transistors.

              Most of recent research on layered chalcogenides is understandably focused on single atomic layers. However, it is unclear if single-layer units are the most ideal structures for enhanced gas-solid interactions. To probe this issue further, we have prepared large-area MoS2 sheets ranging from single to multiple layers on 300 nm SiO2/Si substrates using the micromechanical exfoliation method. The thickness and layering of the sheets were identified by optical microscope, invoking recently reported specific optical color contrast, and further confirmed by AFM and Raman spectroscopy. The MoS2 transistors with different thicknesses were assessed for gas-sensing performances with exposure to NO2, NH3, and humidity in different conditions such as gate bias and light irradiation. The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light. Further, our ab initio DFT calculations on single-layer and bilayer MoS2 show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.
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                Author and article information

                Contributors
                Journal
                NANOHL
                Nanoscale
                Nanoscale
                Royal Society of Chemistry (RSC)
                2040-3364
                2040-3372
                2018
                2018
                : 10
                : 15
                : 7210-7217
                Affiliations
                [1 ]School of Materials Science and Engineering
                [2 ]Harbin Institute of Technology
                [3 ]Harbin 150001
                [4 ]P. R. China
                [5 ]Key Laboratory of Micro-Systems and Micro-Structures Manufacturing
                [6 ]School of Chemistry and Chemical Engineering
                [7 ]China
                Article
                10.1039/C8NR01379A
                6ce6da5d-5a36-4920-9f9b-e7dbdf737f41
                © 2018

                http://rsc.li/journals-terms-of-use

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