Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters

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Abstract

Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS ₂) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS ₂ phototransistors on a polyarylate substrate exhibit decent electrical characteristics ( μ _FE > 64.4 cm ²/Vs, on/off ratio > 10 ⁶), and the integrated F-P filters, being able to cover whole visible spectrum, successfully modulate the spectral response characteristics of MoS ₂ phototransistors from ~495 nm (blue) to ~590 nm (amber). Furthermore, power dependence of both responsivity and specific detectivity shows similar trend with other reports, dominated by the photogating effect. When combined with large-area monolayer MoS ₂ for optical property enhancement and array processing, our results can be further developed into ultra-thin flexible photodetectors for wearables, conformable image sensor, and other optoelectronic applications.

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Emerging photoluminescence in monolayer MoS2.

Andrea Splendiani, Liang Sun, Yuanbo Zhang … (2010)

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.

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Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate.

Yongjie Zhan, Zheng Liu, Sina Najmaei … (2012)

Atomic-layered MoS(2) is synthesized directly on SiO(2) substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Single-Layer MoS2 Phototransistors

Hong Li, Hai Li, Zongyou Yin … (2013)

A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multi-functional optoelectronic device applications in future.

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Author and article information

Journal

Journal ID (nlm-ta): Sci Rep

Journal ID (iso-abbrev): Sci Rep

Title: Scientific Reports

Publisher: Nature Publishing Group

ISSN (Electronic): 2045-2322

Publication date (Electronic): 18 January 2017

Publication date Collection: 2017

Volume: 7

Electronic Location Identifier: 40945

Affiliations

[1 ]School of Electronic Engineering, Soongsil University , Seoul, 06938, South Korea

[2 ]Display Materials & Components Research Center, Korea Electronics Technology Institute , Gyeonggi 13509, South Korea

[3 ]Department of Energy Systems Research, Ajou University , Suwon 16499, South Korea

[4 ]Department of Materials Science and Engineering, University of Illinois , Urbana-Champaign, Illinois 61801, USA

[5 ]Department of Electrical and Computer Engineering, Ajou University , Suwon 16499, South Korea

Author notes

[a ] jsheo@ 123456ajou.ac.kr

[b ] huijoon@ 123456ajou.ac.kr

Article

Publisher Item ID: srep40945

DOI: 10.1038/srep40945

PMC ID: 5241883

PubMed ID: 28098252

SO-VID: 6b04daf2-6b17-48cd-afb2-65d3c54ed2e3

License:

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

History

Date received : 20 October 2016

Date accepted : 12 December 2016

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