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      Flopping-mode spin qubit in a Si-MOS quantum dot

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          Abstract

          Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, “flopping-mode” EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.

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          A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%

          The isolation of qubits from noise sources, such as surrounding nuclear spins and spin-electric susceptibility 1-4 , has enabled extensions of quantum coherence times in recent pivotal advances towards the concrete implementation of spin-based quantum computation. In fact, the possibility of achieving enhanced quantum coherence has been substantially doubted for nanostructures due to the characteristic high degree of background charge fluctuations 5-7 . Still, a sizeable spin-electric coupling will be needed in realistic multiple-qubit systems to address single-spin and spin-spin manipulations 8-10 . Here, we realize a single-electron spin qubit with an isotopically enriched phase coherence time (20 μs) 11,12 and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge noise-rather than conventional magnetic noise-as highlighted by a 1/f spectrum extended over seven decades of frequency. The qubit exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average, offering a promising route to large-scale spin-qubit systems with fault-tolerant controllability.
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            Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

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              Electrically driven single-electron spin resonance in a slanting Zeeman field

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                Author and article information

                Contributors
                Journal
                Applied Physics Letters
                AIP Publishing
                0003-6951
                1077-3118
                March 27 2023
                March 27 2023
                March 27 2023
                March 27 2023
                March 27 2023
                : 122
                : 13
                Article
                10.1063/5.0137259
                69203747-6c4b-44b1-a3ad-23e5b9d86e9b
                © 2023
                History

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