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      Observation of tightly bound trions in monolayer MoS2

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          Abstract

          Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contrast to graphene, monolayer MoS2 is a non-centrosymmetric material with a direct energy gap. Strong photoluminescence, a current on-off ratio exceeding 10^8 in field-effect transistors, and efficient valley and spin control by optical helicity have recently been demonstrated in this material. Here we report the spectroscopic identification in doped monolayer MoS2 of tightly bound negative trions, a quasi-particle composed of two electrons and a hole. These quasi-particles, which can be created with valley and spin polarized holes, have no analogue in other semiconducting materials. They also possess a large binding energy (~ 20 meV), rendering them significant even at room temperature. Our results open up new avenues both for fundamental studies of many-body interactions and for opto-electronic and valleytronic applications in 2D atomic crystals.

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          Transport in strongly correlated two dimensional electron fluids

          We present an overview of the measured transport properties of the two dimensional electron fluids in high mobility semiconductor devices with low electron densities, and of some of the theories that have been proposed to account for them. Many features of the observations are not easily reconciled with a description based on the well understood physics of weakly interacting quasiparticles in a disordered medium. Rather, they reflect new physics associated with strong correlation effects, which warrant further study.
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            Author and article information

            Journal
            31 October 2012
            Article
            10.1038/nmat3505
            1210.8226
            66d7e5b3-502e-48e0-8583-93f91dec86c5

            http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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            18 pages including supplementary information
            cond-mat.mtrl-sci cond-mat.str-el

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