Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone

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Journal

Journal ID (publisher-id): JAPNDE

Title: Japanese Journal of Applied Physics

Abbreviated Title: Jpn. J. Appl. Phys.

Publisher: Japan Society of Applied Physics

ISSN (Print): 0021-4922

ISSN (Electronic): 1347-4065

Publication date Created: March 15 1994

Publication date (Print): March 15 1994

Volume: 33

Issue: Part 1, No. 3A

Pages: 1385-1389

Article

DOI: 10.1143/JJAP.33.1385

SO-VID: 6598ca1f-997a-4045-ad78-afcb9a6340cc

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