Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

Kuo, Yen-Kuang; Liao, Chih-Teng; Tsai, Miao-Chan; Liou, Bo-Ting; Yen, Sheng-Horng

doi:10.1063/1.3471804

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Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

Author(s): Chih-Teng Liao , Miao-Chan Tsai , Bo-Ting Liou , Sheng-Horng Yen , Yen-Kuang Kuo

Publication date Created: September 15 2010

Publication date (Print): September 15 2010

Journal: Journal of Applied Physics

Publisher: AIP Publishing

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Band parameters for nitrogen-containing semiconductors

I Vurgaftman, J R Meyer (2003)

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Origin of efficiency droop in GaN-based light-emitting diodes

Yongjo Park, E. Schubert, Joachim Piprek … (2007)

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Strain-induced polarization in wurtzite III-nitride semipolar layers

J. S. Speck, S. Nakamura, A. E. Romanov … (2006)

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Author and article information

Journal

Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: September 15 2010

Publication date (Print): September 15 2010

Volume: 108

Issue: 6

Page: 063107

Article

DOI: 10.1063/1.3471804

SO-VID: 63a997f3-c965-43cf-99f9-48d759b3e5d7

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