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Metal–insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates
Author(s):
Y. Muraoka
,
Z. Hiroi
Publication date
Created:
January 28 2002
Publication date
(Print):
January 28 2002
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
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Influence of stoichiometry on the metal‐semiconductor transition in vanadium dioxide
H. K. Eastwood
,
C. H. Griffiths
(1974)
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Dependence of microstructure and thermochromism on substrate temperature for sputter-deposited VO2 epitaxial films
P Jin
,
S Tanemura
,
K Yoshimura
(1997)
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Effects of Various Doping Elements on the Transition Temperature of Vanadium Oxide Semiconductors
Minoru Aoki
,
Hisao Futaki
(1969)
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Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
January 28 2002
Publication date (Print):
January 28 2002
Volume
: 80
Issue
: 4
Pages
: 583-585
Article
DOI:
10.1063/1.1446215
SO-VID:
6230ce43-9ba3-4170-a070-dec3a1da4ac4
Copyright ©
© 2002
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