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      GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Valence-Band Parameters in Cubic Semiconductors

          P. Lawaetz (1971)
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            Behavior of the Electronic Dielectric Constant in Covalent and Ionic Materials

            S. Wemple, M. DiDomenico (1971)
            Article 0 comments Cited 362 times – based on 0 reviews     Review now
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              Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures

              C Henry, W. Wiegmann, R. Dingle (1974)
              Article 0 comments Cited 361 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: August 1985
                Publication date (Print): August 1985
                Volume: 58
                Issue: 3
                Pages: R1-R29
                Article
                DOI: 10.1063/1.336070
                SO-VID: 5e854a1d-e034-4db7-9084-e996bd8900dc
                Copyright © © 1985
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