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Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 K
Author(s):
J.B. Casady
,
J.D. Cressler
,
W.C. Dillard
,
R.W. Johnson
,
A.K. Agarwal
,
R.R. Siergiej
Publication date
Created:
June 1996
Publication date
(Print):
June 1996
Journal:
Solid-State Electronics
Publisher:
Elsevier BV
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Paul Drude Institute for Solid State Electronics (PDI)
Author and article information
Journal
Title:
Solid-State Electronics
Abbreviated Title:
Solid-State Electronics
Publisher:
Elsevier BV
ISSN (Print):
00381101
Publication date Created:
June 1996
Publication date (Print):
June 1996
Volume
: 39
Issue
: 6
Pages
: 777-784
Article
DOI:
10.1016/0038-1101(95)00420-3
SO-VID:
5a2f8c1f-63fa-4543-bfdd-29c4ed486ee0
Copyright ©
© 1996
License:
http://www.elsevier.com/tdm/userlicense/1.0/
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