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      Application of pulsed laser annealing to ferromagnetic GaMnAs

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          Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorGa1−xMnxAs

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            Macroscopic theory of pulsed-laser annealing. I. Thermal transport and melting

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              Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group‐III and group‐V dopants in silicon

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                1098-0121
                1550-235X
                March 2010
                March 2 2010
                : 81
                : 11
                Article
                10.1103/PhysRevB.81.115202
                5925c7e7-697a-4b3c-b965-a7669f29c835
                © 2010

                http://link.aps.org/licenses/aps-default-license

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