Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors.

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Abstract

An ambipolar dual-channel field-effect transistor (FET) with a WSe2 /MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2 , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe2 /MoS2 dual-channel FET.

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Author and article information

Journal

Journal ID (iso-abbrev): Adv Mater

Title: Advanced materials (Deerfield Beach, Fla.)

Publisher: Wiley

ISSN (Electronic): 1521-4095

ISSN (Print): 0935-9648

Publication date (Electronic): Nov 2016

Volume: 28

Issue: 43

Affiliations

[1 ] Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.

[2 ] Department of Physics, Pusan National University, Busan, 46241, Korea.

[3 ] Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea.

[4 ] Department of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.

[5 ] Department of Material Science and Engineering, Yonsei University, Seoul, 03722, Korea.

[6 ] Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.

[7 ] ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, 34129, Korea.

Article

DOI: 10.1002/adma.201601949

PubMed ID: 27619888

SO-VID: 5598d339-56eb-40ab-a42b-e690594599c9

History

Keywords: MoS2,WSe2,dual-channel,heterostructures,photoresponse

Data availability:

Keywords: MoS2, WSe2, dual-channel, heterostructures, photoresponse

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