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      Topological superconductivity in monolayer transition metal dichalcogenides

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          Abstract

          Theoretically, it has been known that breaking spin degeneracy and effectively realizing spinless fermions is a promising path to topological superconductors. Yet, topological superconductors are rare to date. Here we propose to realize spinless fermions by splitting the spin degeneracy in momentum space. Specifically, we identify monolayer hole-doped transition metal dichalcogenide (TMD)s as candidates for topological superconductors out of such momentum-space-split spinless fermions. Although electron-doped TMDs have recently been found superconducting, the observed superconductivity is unlikely topological because of the near spin degeneracy. Meanwhile, hole-doped TMDs with momentum-space-split spinless fermions remain unexplored. Employing a renormalization group analysis, we propose that the unusual spin-valley locking in hole-doped TMDs together with repulsive interactions selectively favours two topological superconducting states: interpocket paired state with Chern number 2 and intrapocket paired state with finite pair momentum. A confirmation of our predictions will open up possibilities for manipulating topological superconductors on the device-friendly platform of monolayer TMDs.

          Abstract

          Conditions to realize topological superconductivity have long been known, but the materialization remains rare. Here, Hsu et al. report a strategy towards possible topological superconductivity in monolayer hole-doped transition metal dichalcogenide by splitting the spin degeneracy in momentum space.

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          Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

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            Conformal invariance, the central charge, and universal finite-size amplitudes at criticality.

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              The Valley Hall Effect in MoS2 Transistors

              Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose sign depends on the valley index, but to date this effect has not been observed. Here we report the first observation of this new valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated by circularly polarized light which preferentially excites electrons into a specific valley, and a finite anomalous Hall voltage is observed whose sign is controlled by the helicity of the light. Its magnitude is consistent with theoretical predictions of the VHE, and no anomalous Hall effect is observed in bilayer devices due to the restoration of crystal inversion symmetry. Our observation of the VHE opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.
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                Author and article information

                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group
                2041-1723
                11 April 2017
                2017
                : 8
                : 14985
                Affiliations
                [1 ]Department of Physics, Cornell University , Ithaca, New York 14853, USA
                [2 ]Department of Physics, Stanford University , Stanford, California 94305-4060, USA
                [3 ]Department of Condensed Matter Physics, Weizmann Institute of Science , Rehovot 7610001, Israel
                Author notes
                Author information
                http://orcid.org/0000-0002-9554-4443
                Article
                ncomms14985
                10.1038/ncomms14985
                5394266
                28397804
                54d74b3c-d950-40ba-a526-f4d7500f8041
                Copyright © 2017, The Author(s)

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 26 July 2016
                : 20 February 2017
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