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      New infrared detector on a silicon chip

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          Semiconductor Physics

          Karlheinz Seeger (1973)
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            Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy

            L Feldman, J. C. Bean, T. T. Sheng … (1984)
            Article 0 comments Cited 64 times – based on 0 reviews     Review now
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              Silicon MBE apparatus for uniform high‐rate deposition on standard format wafers

              E.A. Sadowski, J.C. Bean (1982)
              Article 0 comments Cited 33 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: IEEE Transactions on Electron Devices
                Abbreviated Title: IEEE Trans. Electron Devices
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 0018-9383
                Publication date Created: September 1984
                Publication date (Print): September 1984
                Volume: 31
                Issue: 9
                Pages: 1135-1139
                Article
                DOI: 10.1109/T-ED.1984.21676
                SO-VID: 540a3620-f319-4d95-9bfc-5e29ea811b51
                Copyright © © 1984
                History

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