Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures

Nabatame, T.; MATSUI, Y; Kimoto, K; Toriumi, A.; Tanaka, I; Mizoguchi, T; Yasuda, T

doi:10.1063/1.1629397

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Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures

Author(s): K. Kimoto , Y. Matsui , T. Nabatame , T. Yasuda , T. Mizoguchi , I. Tanaka , A. Toriumi

Publication date Created: November 24 2003

Publication date (Print): November 24 2003

Journal: Applied Physics Letters

Publisher: AIP Publishing

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High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, J. M. Anthony, R. M. Wallace (2001)

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The electronic structure at the atomic scale of ultrathin gate oxides

T Sorsch, G. Timp, S. Moccio … (1999)

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Simultaneous STEM imaging and electron energy-loss spectroscopy with atomic-column sensitivity

P E Batson (1993)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: November 24 2003

Publication date (Print): November 24 2003

Volume: 83

Issue: 21

Pages: 4306-4308

Article

DOI: 10.1063/1.1629397

SO-VID: 531df044-d5b7-4caa-900a-f01928e2d3e3

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Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures

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Atomic Force Microscopy

Most cited references 20

High-κ gate dielectrics: Current status and materials properties considerations

The electronic structure at the atomic scale of ultrathin gate oxides

Simultaneous STEM imaging and electron energy-loss spectroscopy with atomic-column sensitivity

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Journal

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