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      Cryo-Compatible In Situ Strain Tuning of 2D Material-Integrated Nanocavity

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          Atomically ThinMoS2: A New Direct-Gap Semiconductor

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            Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

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              Monolayer semiconductor nanocavity lasers with ultralow thresholds.

              Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.
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                Author and article information

                Contributors
                Journal
                ACS Photonics
                ACS Photonics
                American Chemical Society (ACS)
                2330-4022
                2330-4022
                September 20 2023
                August 08 2023
                September 20 2023
                : 10
                : 9
                : 3242-3247
                Affiliations
                [1 ]Department of Physics, University of Washington, Seattle, Washington 98195, United States
                [2 ]Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
                [3 ]Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
                Article
                10.1021/acsphotonics.3c00662
                4e030275-5296-4471-81d8-819e846e41f8
                © 2023

                https://doi.org/10.15223/policy-029

                https://doi.org/10.15223/policy-037

                https://doi.org/10.15223/policy-045

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