Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

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Most cited references 38

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Hole traps and trivalent silicon centers in metal/oxide/silicon devices

P. V. Dressendorfer, P. Lenahan (1984)

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Oxygen vacancy model for the E1′ center in SiO2

W.Beall Fowler, Frank J. Feigl, Kwok L. Yip (1974)

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Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

J. R. Williams, K Mcdonald, M. Di Ventra … (2000)

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Author and article information

Journal

Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: June 15 2009

Publication date (Print): June 15 2009

Volume: 105

Issue: 12

Page: 124506

Article

DOI: 10.1063/1.3131845

SO-VID: 4d5417a8-b41c-4932-80c3-9cda5a406c89

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