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      Inactive (PbI 2 ) 2 RbCl stabilizes perovskite films for efficient solar cells

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          Abstract

          In halide perovskite solar cells the formation of secondary-phase excess lead iodide (PbI 2 ) has some positive effects on power conversion efficiency (PCE) but can be detrimental to device stability and lead to large hysteresis effects in voltage sweeps. We converted PbI 2 into an inactive (PbI 2 ) 2 RbCl compound by RbCl doping, which effectively stabilizes the perovskite phase. We obtained a certified PCE of 25.6% for FAPbI 3 (FA, formamidinium) perovskite solar cells on the basis of this strategy. Devices retained 96% of their original PCE values after 1000 hours of shelf storage and 80% after 500 hours of thermal stability testing at 85°C.

          Managing excess lead iodide

          In hybrid perovskite solar cells, the formation of lead iodide (PbI2) can provide some passivation effects but can lead to device instability and hysteresis in current–density changes with voltage. Zhao et al . show that doping with rubidium chloride (RbCl) can create a passive inactive (PbI 2 ) 2 RbCl phase that stabilizes the perovskite phase and lowers its bandgap. Devices exhibited 25.6% certified power efficiency and maintained 80% of that efficiency after 500 hours of operation at 85°C. —PDS

          Abstract

          Converting PbI 2 into inactive (PbI 2 ) 2 RbCl by RbCl doping can stabilize the perovskite phase and increase efficiency.

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          Most cited references45

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          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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            Special points for Brillouin-zone integrations

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                Author and article information

                Contributors
                Journal
                Science
                Science
                American Association for the Advancement of Science (AAAS)
                0036-8075
                1095-9203
                July 29 2022
                July 29 2022
                : 377
                : 6605
                : 531-534
                Affiliations
                [1 ]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P.R. China, 100083.
                [2 ]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P.R. China, 100049.
                [3 ]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P.R. China, 100083.
                [4 ]Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, P.R. China, 410083.
                [5 ]Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan, P.R. China, 410083.
                Article
                10.1126/science.abp8873
                35901131
                45170918-e286-4400-bd3c-4b653dff7117
                © 2022
                History

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