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      Metastability and reliability of CdTe solar cells

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          Large-signal analysis of a silicon Read diode oscillator

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            Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe

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              Grain-boundary-enhanced carrier collection in CdTe solar cells.

              When CdTe solar cells are doped with Cl, the grain boundaries no longer act as recombination centers but actively contribute to carrier collection efficiency. The physical origin of this remarkable effect has been determined through a combination of aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles theory. Cl substitutes for a large proportion of the Te atoms within a few unit cells of the grain boundaries. Density functional calculations reveal the mechanism, and further indicate the grain boundaries are inverted to n type, establishing local p-n junctions which assist electron-hole pair separation. The mechanism is electrostatic, and hence independent of the geometry of the boundary, thereby explaining the universally high collection efficiency of Cl-doped CdTe solar cells.
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                Author and article information

                Journal
                Journal of Physics D: Applied Physics
                J. Phys. D: Appl. Phys.
                IOP Publishing
                0022-3727
                1361-6463
                April 18 2018
                April 18 2018
                March 22 2018
                : 51
                : 15
                : 153002
                Article
                10.1088/1361-6463/aab1e1
                43d930ba-b32d-48bb-bdef-6aaa9b16cc49
                © 2018

                http://iopscience.iop.org/info/page/text-and-data-mining

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