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      Probing the structures and bonding of size-selected boron and doped-boron clusters

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          Abstract

          Photoelectron spectroscopy in conjunction with theoretical calculations has been used to investigate size-selected boron clusters, uncovering interesting structures and bonding.

          Abstract

          Because of their interesting structures and bonding and potentials as motifs for new nanomaterials, size-selected boron clusters have received tremendous interest in recent years. In particular, boron cluster anions (B n ) have allowed systematic joint photoelectron spectroscopy and theoretical studies, revealing predominantly two-dimensional structures. The discovery of the planar B 36 cluster with a central hexagonal vacancy provided the first experimental evidence of the viability of 2D borons, giving rise to the concept of borophene. The finding of the B 40 cage cluster unveiled the existence of fullerene-like boron clusters (borospherenes). Metal-doping can significantly extend the structural and bonding repertoire of boron clusters. Main-group metals interact with boron through s/p orbitals, resulting in either half-sandwich-type structures or substitutional structures. Transition metals are more versatile in bonding with boron, forming a variety of structures including half-sandwich structures, metal-centered boron rings, and metal-centered boron drums. Transition metal atoms have also been found to be able to be doped into the plane of 2D boron clusters, suggesting the possibility of metalloborophenes. Early studies of di-metal-doped boron clusters focused on gold, revealing ladder-like boron structures with terminal gold atoms. Recent observations of highly symmetric Ta 2B 6 and Ln 2B n ( n = 7–9) clusters have established a family of inverse sandwich structures with monocyclic boron rings stabilized by two metal atoms. The study of size-selected boron and doped-boron clusters is a burgeoning field of research. Further investigations will continue to reveal more interesting structures and novel chemical bonding, paving the foundation for new boron-based chemical compounds and nanomaterials.

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          Electric Field Effect in Atomically Thin Carbon Films

          We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
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            Helical microtubules of graphitic carbon

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              C60: Buckminsterfullerene

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                Author and article information

                Contributors
                Journal
                CSRVBR
                Chemical Society Reviews
                Chem. Soc. Rev.
                Royal Society of Chemistry (RSC)
                0306-0012
                1460-4744
                July 1 2019
                2019
                : 48
                : 13
                : 3550-3591
                Affiliations
                [1 ]Department of Chemistry
                [2 ]Brown University
                [3 ]Providence
                [4 ]USA
                [5 ]School of Chemistry and Chemical Engineering
                [6 ]Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials
                [7 ]Henan Normal University
                [8 ]Xinxiang
                [9 ]China
                [10 ]Nanocluster Laboratory
                [11 ]Institute of Molecular Science
                [12 ]Shanxi University
                [13 ]Taiyuan 030006
                [14 ]Department of Chemistry and Biochemistry
                [15 ]Utah State University
                [16 ]Logan
                [17 ]Department of Chemistry and Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education
                [18 ]Tsinghua University
                [19 ]Beijing 100084
                Article
                10.1039/C9CS00233B
                31120469
                429dac08-6c43-46c3-8bb0-ed91a2320aec
                © 2019

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