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      Laser-induced topological spin switching in a 2D van der Waals magnet

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          Abstract

          Two-dimensional (2D) van der Waals (vdW) magnets represent one of the most promising horizons for energy-efficient spintronic applications because their broad range of electronic, magnetic and topological properties. However, little is known about the interplay between light and spin properties in vdW layers. Here we show that ultrafast laser excitation can not only generate different type of spin textures in CrGeTe 3 vdW magnets but also induce a reversible transformation between them in a topological toggle switch mechanism. Our atomistic spin dynamics simulations and wide-field Kerr microscopy measurements show that different textures can be generated via high-intense laser pulses within the picosecond regime. The phase transformation between the different topological spin textures is obtained as additional laser pulses are applied to the system where the polarisation and final state of the spins can be controlled by external magnetic fields. Our results indicate laser-driven spin textures on 2D magnets as a pathway towards reconfigurable topological architectures at the atomistic level.

          Abstract

          Van der Waals magnetic materials, which maintain their magnetic ordering down to a monolayer have been found to host a variety of spin textures, including topological spin textures such as skyrmions. Here, Khela et al. demonstrate laser induced topological switching, between skyrmions, anti-skyrmions and stripe domains in CrGeTe 3.

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          Magnetic domain-wall racetrack memory.

          Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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            Skyrmions on the track.

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              Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit

              Since the discovery of graphene, the family of two-dimensional materials has grown, displaying a broad range of electronic properties. Recent additions include semiconductors with spin–valley coupling, Ising superconductors that can be tuned into a quantum metal, possible Mott insulators with tunable charge-density waves, and topological semimetals with edge transport. However, no two-dimensional crystal with intrinsic magnetism has yet been discovered; such a crystal would be useful in many technologies from sensing to data storage. Theoretically, magnetic order is prohibited in the two-dimensional isotropic Heisenberg model at finite temperatures by the Mermin–Wagner theorem. Magnetic anisotropy removes this restriction, however, and enables, for instance, the occurrence of two-dimensional Ising ferromagnetism. Here we use magneto-optical Kerr effect microscopy to demonstrate that monolayer chromium triiodide (CrI3) is an Ising ferromagnet with out-of-plane spin orientation. Its Curie temperature of 45 kelvin is only slightly lower than that of the bulk crystal, 61 kelvin, which is consistent with a weak interlayer coupling. Moreover, our studies suggest a layer-dependent magnetic phase, highlighting thickness-dependent physical properties typical of van der Waals crystals. Remarkably, bilayer CrI3 displays suppressed magnetization with a metamagnetic effect, whereas in trilayer CrI3 the interlayer ferromagnetism observed in the bulk crystal is restored. This work creates opportunities for studying magnetism by harnessing the unusual features of atomically thin materials, such as electrical control for realizing magnetoelectronics, and van der Waals engineering to produce interface phenomena.
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                Author and article information

                Contributors
                M.K.Dabrowski@exeter.ac.uk
                esantos@ed.ac.uk
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                13 March 2023
                13 March 2023
                2023
                : 14
                : 1378
                Affiliations
                [1 ]GRID grid.4305.2, ISNI 0000 0004 1936 7988, Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, , The University of Edinburgh, ; EH9 3FD Edinburgh, UK
                [2 ]GRID grid.8391.3, ISNI 0000 0004 1936 8024, Department of Physics and Astronomy, , University of Exeter, ; EX4 4QL Exeter, UK
                [3 ]GRID grid.83440.3b, ISNI 0000000121901201, London Centre for Nanotechnology, , University College London, ; 17-19 Gordon Street, London, WCH1 0AH UK
                [4 ]GRID grid.4280.e, ISNI 0000 0001 2180 6431, Department of Physics, , National University of Singapore, ; Singapore, Singapore
                [5 ]Centre for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
                [6 ]GRID grid.4280.e, ISNI 0000 0001 2180 6431, Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, , National University of Singapore, ; Singapore, Singapore
                [7 ]GRID grid.83440.3b, ISNI 0000000121901201, Department of Electronic & Electrical Engineering, , UCL, ; London, WC1E 7JE UK
                [8 ]GRID grid.69566.3a, ISNI 0000 0001 2248 6943, WPI Advanced Institute for Materials Research, , Tohoku University, ; 2-1-1, Katahira, Sendai 980-8577 Japan
                [9 ]GRID grid.4305.2, ISNI 0000 0004 1936 7988, Higgs Centre for Theoretical Physics, , The University of Edinburgh, ; EH9 3FD Edinburgh, UK
                Author information
                http://orcid.org/0000-0002-6033-5721
                http://orcid.org/0000-0002-7679-6418
                http://orcid.org/0000-0002-1575-8020
                http://orcid.org/0000-0002-4788-6211
                http://orcid.org/0000-0002-2021-1556
                http://orcid.org/0000-0001-6065-5787
                Article
                37082
                10.1038/s41467-023-37082-y
                10011585
                36914683
                42225d51-8a2a-491e-914c-7307f0fd19a9
                © The Author(s) 2023

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 20 September 2022
                : 1 March 2023
                Funding
                Funded by: FundRef https://doi.org/10.13039/501100000266, RCUK | Engineering and Physical Sciences Research Council (EPSRC);
                Award ID: EP/T021578/1
                Award Recipient :
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                © The Author(s) 2023

                Uncategorized
                materials science,materials for devices
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                materials science, materials for devices

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