Thermal transport through GaN–SiC interfaces from 300 to 600 K

Moustakas, Theodore D.; Schmidt, Aaron J.; Ziade, Elbara; Yang, Jia; Brummer, Gordie; Nothern, Denis

doi:10.1063/1.4930104

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Thermal transport through GaN–SiC interfaces from 300 to 600 K

Author(s): Elbara Ziade ¹ ^, ² , Jia Yang ¹ ^, ² , Gordie Brummer ² ^, ³ , Denis Nothern ² ^, ⁴ , Theodore Moustakas ² ^, ³ ^, ⁴ , Aaron J. Schmidt ¹ ^, ² ^, ⁴

Publication date Created: August 31 2015

Publication date (Print): August 31 2015

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Thermal boundary resistance

E. T. Swartz, R. Pohl (1989)

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A frequency-domain thermoreflectance method for the characterization of thermal properties

Matteo Chiesa, Ramez Cheaito, Aaron J. Schmidt (2009)

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Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Augusto Tazzoli, Enrico Zanoni, Franco Zanon … (2008)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: August 31 2015

Publication date (Print): August 31 2015

Volume: 107

Issue: 9

Page: 091605

Affiliations

[1 ]Department of Mechanical Engineering, Boston University, Boston, Massachusetts 02215, USA

[2 ]Photonics Center, Boston University, Boston, Massachusetts 02215, USA

[3 ]Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215, USA

[4 ]Division of Material Science and Engineering, Boston University, Boston, Massachusetts 02215, USA

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DOI: 10.1063/1.4930104

SO-VID: 397c04d3-464d-4e8c-b699-4b5b6f5b84d0

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Thermal transport through GaN–SiC interfaces from 300 to 600 K

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Renewable Energy - Storage

Most cited references 23

Thermal boundary resistance

A frequency-domain thermoreflectance method for the characterization of thermal properties

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

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