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      Details of the damage profile in self-ion-implanted silicon

      , , ,
      Journal of Raman Spectroscopy
      Wiley

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          Adiabatic bond charge model for the phonons in diamond, Si, Ge, and\(\alpha -\mathrm{Sn}\)

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            Structural relaxation and defect annihilation in pure amorphous silicon

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              Calorimetric evidence for structural relaxation in amorphous silicon.

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                Author and article information

                Journal
                Journal of Raman Spectroscopy
                J. Raman Spectrosc.
                Wiley
                03770486
                July 1994
                July 1994
                April 12 2005
                : 25
                : 7-8
                : 515-520
                Article
                10.1002/jrs.1250250712
                3667e391-87a6-46be-a0ce-a99c1c55bdb0
                © 2005

                http://doi.wiley.com/10.1002/tdm_license_1.1

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