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      Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review

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          Abstract

          Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, p-n junction type and p-i-n junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.

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          Graphene Photonics and Optoelectronics

          T. Hasan, F Bonaccorso, A. C. Ferrari … (2010)
          The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultra-wide-band tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light emitting devices, to touch screens, photodetectors and ultrafast lasers. Here we review the state of the art in this emerging field.
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            Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

            B. Sverdlov, H Morkoç, S. Strite … (1994)
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              ZnO nanowire UV photodetectors with high internal gain.

              C Soci, A Zhang, B Xiang … (2007)
              ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.
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                Author and article information

                Journal
                Journal ID (nlm-ta): Sensors (Basel)
                Journal ID (iso-abbrev): Sensors (Basel)
                Journal ID (publisher-id): sensors
                Title: Sensors (Basel, Switzerland)
                Publisher: MDPI
                ISSN (Electronic): 1424-8220
                Publication date (Electronic): 28 June 2018
                Publication date Collection: July 2018
                Volume: 18
                Issue: 7
                Electronic Location Identifier: 2072
                Affiliations
                [1 ]School of Science, Jilin Institute of Chemical Technology, Jilin 132022, China; zyndoudou@ 123456163.com
                [2 ]Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics and Electronic Sciences, Hubei University, Wuhan 430062, China; zhangyuehb@ 123456outlook.com
                Author notes
                [* ]Correspondence: huym@ 123456hubu.edu.cn (Y.H.); guhsh@ 123456hubu.edu.cn (H.G.); Tel.: +86-132-9706-9209 (Y.H.); +86-027-8866-5568 (H.G.)
                Article
                Publisher ID: sensors-18-02072
                DOI: 10.3390/s18072072
                PMC ID: 6068994
                PubMed ID: 29958452
                SO-VID: 3633396b-3bff-48cd-9362-c178199b232b
                Copyright © © 2018 by the authors.
                License:

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                Date received : 07 May 2018
                Date accepted : 27 June 2018
                Categories
                Subject: Review

                ScienceOpen disciplines: Biomedical engineering
                Keywords: uv detectors,wide bandgap semiconductor,nanowire
                Data availability:
                ScienceOpen disciplines: Biomedical engineering
                Keywords: uv detectors, wide bandgap semiconductor, nanowire

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