1.54 [micro sign]m GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

Mi, Z; Bhattacharya, P.; Jallipalli, A; Kutty, M.N.; Nuntawong, N.; Dawson, L.R.; Huffaker, D.L.; Huang, S.H.; Balakrishnan, G.; Tatebayashi, J.

doi:10.1049/el:20072441

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1.54 [micro sign]m GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

Author(s): A. Jallipalli , M.N. Kutty , G. Balakrishnan , J. Tatebayashi , N. Nuntawong , S.H. Huang , L.R. Dawson , D.L. Huffaker , Z. Mi , P. Bhattacharya

Publication date Created: 2007

Publication date (Print): 2007

Journal: Electronics Letters

Publisher: Institution of Engineering and Technology (IET)

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Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si[sub 1−x]Ge[sub x]/Si substrates

R. M. Sieg (1998)

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Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates

O. Qasaimeh, J Jiang, X. -f. Liu … (1999)

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Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon

Z Mi, J Yang, P. Bhattacharya … (2006)

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Journal ID (publisher-id): ELLEAK

Title: Electronics Letters

Abbreviated Title: Electron. Lett.

Publisher: Institution of Engineering and Technology (IET)

ISSN (Print): 00135194

Publication date Created: 2007

Publication date (Print): 2007

Volume: 43

Issue: 22

Page: 1198

Article

DOI: 10.1049/el:20072441

SO-VID: 311368fb-bb25-4b08-80db-cd098ef6fbae

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1.54 [micro sign]m GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

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Most cited references 10

Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si[sub 1−x]Ge[sub x]/Si substrates

Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates

Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon

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