Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy

Tsang, W. T.

doi:10.1063/1.93046

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Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy

Author(s): W. T. Tsang

Publication date Created: February 1982

Publication date (Print): February 1982

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Most cited references 13

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Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers

F. Merritt, R. A. Logan, C Henry (1980)

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Gain-current relation for GaAs lasers with n-type and undoped active layers

F. Stern (1973)

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Room‐temperature threshold‐current dependence of GaAs‐AlxGa1−xAs double‐heterostructure lasers onxand active‐layer thickness

H. C. Casey (1978)

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Author and article information

Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: February 1982

Publication date (Print): February 1982

Volume: 40

Issue: 3

Pages: 217-219

Article

DOI: 10.1063/1.93046

SO-VID: 2af3152a-cbb8-4b3b-8f78-f0fc8de18319

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