Hydrogenation of defects in edge-defined film-fed grown aluminum-enhanced plasma enhanced chemical vapor deposited silicon nitride multicrystalline silicon

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Hydrogen in crystalline semiconductors

J. W. Corbett, S Pearton, T Shi (1987)

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Trapping of minority carriers in multicrystalline silicon

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Defect-induced dissociation of ${\mathrm{H}}_{2}$ in silicon

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Author and article information

Journal

Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: May 15 2000

Publication date (Print): May 15 2000

Volume: 87

Issue: 10

Pages: 7551-7557

Article

DOI: 10.1063/1.373427

SO-VID: 2aeee1e6-eec5-4aa4-ac3b-98d154ddaa17

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