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      Exfoliation and Defect Control of Two-Dimensional Few-Layer MXene Ti3C2Tx for Electromagnetic Interference Shielding Coatings.

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          Abstract

          Defect-controlled exfoliation of few-layer transition-metal carbide (f-Ti3C2Tx) MXene was demonstrated by optimizing chemical etching conditions, and electromagnetic interference (EMI) shielding coatings were explored. The structural features such as layer morphology, lateral size, layer thickness, defect density, and mechanical stability of the exfoliated f-Ti3C2Tx were strongly dependent on exfoliation conditions. By selecting appropriate exfoliation conditions, moderate etching time leads to the formation of quality f-Ti3C2Tx with lesser defects, whereas longer etching time can break the layer structure and increase defect density, structural misalignment, and oxidative products of f-Ti3C2Tx. The resultant fabricated free-standing flexible f-Ti3C2Tx films exhibited electrical conductivity and electromagnetic interference (EMI) shielding effectiveness (SE) in the X-band of about 3669 ± 33 S/m and 31.97 dB, respectively, at a thickness of 6 μm. The large discrepancy in EMI SE performance between quality (31.97 dB) and defected (3.164 dB) f-Ti3C2Tx sheets is attributed to interconnections between f-Ti3C2Tx nanolaminates interrupted by defects and oxidative products, influencing EMI attenuation ability. Furthermore, the demonstrated solution-processable high-quality f-Ti3C2Tx inks are compatible and, when applied for EM barrier coating on various substrates, including paper, cellulose fabric, and PTFE membranes, exhibited significant EMI shielding performance. Moreover, controlling defects in f-Ti3C2Tx and assembly of heterogeneous disordered carbon-loaded TiO2-Ti3C2Tx ternary hybrid nanostructures from f-Ti3C2Tx by tuning etching conditions could play an enormous role in energy and environmental applications.

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          Author and article information

          Journal
          ACS Appl Mater Interfaces
          ACS applied materials & interfaces
          American Chemical Society (ACS)
          1944-8252
          1944-8244
          Nov 04 2020
          : 12
          : 44
          Affiliations
          [1 ] Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.
          [2 ] Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen 518055, China.
          [3 ] School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
          Article
          10.1021/acsami.0c12835
          33085473
          28113dac-f8d9-440f-b278-2e98a55e555c
          History

          EMI shielding,MXene,coating,conducting ink,defect control
          EMI shielding, MXene, coating, conducting ink, defect control

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