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      Phase Engineering of Two‐Dimensional Transition Metal Dichalcogenides

      1 , 2 , 1 , 1
      Small Science
      Wiley

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          Abstract

          Since the successful isolation of single‐layer graphene with an atomic thickness, various van der Waals (vdW) materials have been intensively studied owing to their unique properties. Among the families of vdW materials, transition metal dichalcogenides (TMDs) have served as representatives because of their diverse band structures and intriguing quantum states, unlike those observed in their bulk counterparts. Particularly, unconventional polymorphic phases of TMDs increase the degrees of freedom in device fabrication and property modulation. As variations in structural phases significantly change the electrical, physical, and chemical properties of materials, phase engineering is essential for the new paradigm of TMD‐based devices. In this review, diverse strategies that can induce and control structural phases in TMDs are explored. After introducing the polymorphic phase changes and the resulting electronic band structures, the various empirical approaches used for manipulating phases in vdW materials, including phase‐selective synthesis and post‐synthesis treatments, are summarized. The group‐VI TMDs are considered as reference, and the analysis is extended to other TMDs across various groups in the periodic table. In addition to providing a comprehensive survey of the recent progress in TMD applications, the challenges for TMD applications and potential opportunities in emerging fields are discussed.

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          Electric Field Effect in Atomically Thin Carbon Films

          We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
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            The rise of graphene.

            Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena, some of which are unobservable in high-energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick, and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.
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              Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

              The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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                Author and article information

                Contributors
                Journal
                Small Science
                Small Science
                Wiley
                2688-4046
                2688-4046
                January 2024
                November 27 2023
                January 2024
                : 4
                : 1
                Affiliations
                [1 ]Department of Materials Science and Engineering Seoul National University Seoul 08826 Korea
                [2 ]Department of Physics Inha University Incheon 22212 Republic of Korea
                Article
                10.1002/smsc.202300093
                241e97f6-7041-42af-bf7b-f40721ab04bc
                © 2024

                http://creativecommons.org/licenses/by/4.0/

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