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      Microstrain‐Stimulated Elastico‐Mechanoluminescence with Dual‐Mode Stress Sensing

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          Abstract

          Elastico‐mechanoluminescence technology has shown significant application prospects in stress sensing, artificial skin, remote interaction, and other research areas. Its progress mainly lies in realizing stress visualization and 2D or even 3D stress‐sensing effects using a passive sensing mode. However, the widespread promotion of mechanoluminescence (ML) technology is hindered by issues such as high stress or strain thresholds and a single sensing mode based on luminous intensity. In this study, a highly efficient green‐emitting ML with dual‐mode stress‐sensing characteristics driven by microscale strain is developed using LiTaO 3:Tb 3+. In addition to single‐mode sensing based on the luminous intensity, the self‐defined parameter ( Q) is also introduced as a dual‐mode factor for sensing the stress velocity. Impressively, the fabricated LiTaO 3:Tb 3+ film is capable of generating discernible ML signals even when supplied with strains as low as 500 µst. This is the current minimum strain value that can drive green‐emitting ML. This study offers an ideal photonic platform for exploring the potential applications of rare‐earth‐doped elastico‐ML materials in remote interaction devices, high‐precision stress sensors, and single‐molecule biological imaging.

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          Generalized Gradient Approximation Made Simple

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            Dynamic pressure mapping of personalized handwriting by a flexible sensor matrix based on the mechanoluminescence process.

            A self-powered pressure-sensor matrix based on ZnS:Mn particles for more-secure signature collection is presented, by recording both handwritten signatures and the pressure applied by the signees. This large-area, flexible sensor matrix can map 2D pressure distributions in situ, either statically or dynamically, and the piezophotonic effect is proposed to initiate the mechanoluminescence process once a dynamic mechanical strain is applied.
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              Ti3C2TX MXene for Sensing Applications: Recent Progress, Design Principles, and Future Perspectives.

              Sensors are becoming increasingly significant in our daily life because of the rapid development in electronic and information technologies, including Internet of Things, wearable electronics, home automation, intelligent industry, etc. There is no doubt that their performances are primarily determined by the sensing materials. Among all potential candidates, layered nanomaterials with two-dimensional (2D) planar structure have numerous superior properties to their bulk counterparts which are suitable for building various high-performance sensors. As an emerging 2D material, MXenes possess several advantageous features of adjustable surface properties, tunable bandgap, and excellent mechanical strength, making them attractive in various applications. Herein, we particularly focus on the recent research progress in MXene-based sensors, discuss the merits of MXenes and their derivatives as sensing materials for collecting various signals, and try to elucidate the design principles and working mechanisms of the corresponding MXene-based sensors, including strain/stress sensors, gas sensors, electrochemical sensors, optical sensors, and humidity sensors. In the end, we analyze the main challenges and future outlook of MXene-based materials in sensor applications.
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                Author and article information

                Contributors
                Journal
                Advanced Materials
                Advanced Materials
                Wiley
                0935-9648
                1521-4095
                June 2024
                April 18 2024
                June 2024
                : 36
                : 26
                Affiliations
                [1 ] Faculty of Materials Science and Chemistry China University of Geosciences 388 Lumo Road Wuhan 430074 China
                [2 ] Key Laboratory of Functional Materials and Devices for Informatics of Anhui Higher Education Institutes Fuyang Normal University Fuyang 236037 China
                [3 ] Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China
                [4 ] Zhejiang Institute China University of Geosciences Hangzhou 311305 China
                [5 ] Shenzhen Research Institute Wuhan University Shenzhen 518057 China
                Article
                10.1002/adma.202401296
                38599208
                14f9429d-9d19-4e44-9913-a8b92510d2f2
                © 2024

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