Two-dimensional layered nanomaterials for gas-sensing applications

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Abstract

In this critical review, we mainly focus on the current developments of gas sensors based on typical 2D layered nanomaterials, including graphene, MoS ₂, MoSe ₂, WS ₂, SnS ₂, VS ₂, black phosphorus (BP), h-BN, and g-C ₃N ₄.

Abstract

Owing to the unique thickness dependent physical and chemical properties, two-dimensional (2D) layered nanomaterials have received tremendous attention and shown great potential in the fabrication of high-performance electronic/optoelectronic devices. Notably, the implication of 2D nanomaterials in the gas-sensing field has also drawn considerable attention but few related review studies have been reported. This critical review mainly focuses on the current progress of 2D layered nanomaterials in gas-sensing applications. Firstly, we describe the basic attributes of 2D layered nanostructures and discuss the fundamentals of their gas-sensing applications. Secondly, we have numerated recent gas-sensing studies on typical 2D layered nanomaterials, including graphene, MoS ₂, MoSe ₂, WS ₂, SnS ₂, black phosphorus, and others. Particularly, the optimized strategies for improving their gas-sensing performances are also discussed here. Finally, we conclude this review with some perspectives and the outlook on future advances in this field.

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Two-Dimensional Gas of Massless Dirac Fermions in Graphene

A Firsov, I. Grigorieva, S Dubonos … (2005)

Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective "speed of light" c* ~10^6m/s. Our studies of graphene - a single atomic layer of carbon - have revealed a variety of unusual phenomena characteristic of two-dimensional (2D) Dirac fermions. In particular, we have observed that a) the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; b) graphene's conductivity never falls below a minimum value corresponding to the conductance quantum e^2/h, even when carrier concentrations tend to zero; c) the cyclotron mass m of massless carriers with energy E in graphene is described by equation E =mc*^2; and d) Shubnikov-de Haas oscillations in graphene exhibit a phase shift of pi due to Berry's phase.

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Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

Horst L. Stormer, Yan-Wen Tan, Yuanbo Zhang … (2005)

When electrons are confined in two-dimensional (2D) materials, quantum mechanically enhanced transport phenomena, as exemplified by the quantum Hall effects (QHE), can be observed. Graphene, an isolated single atomic layer of graphite, is an ideal realization of such a 2D system. Here, we report an experimental investigation of magneto transport in a high mobility single layer of graphene. Adjusting the chemical potential using the electric field effect, we observe an unusual half integer QHE for both electron and hole carriers in graphene. Vanishing effective carrier masses is observed at Dirac point in the temperature dependent Shubnikov de Haas oscillations, which probe the 'relativistic' Dirac particle-like dispersion. The relevance of Berry's phase to these experiments is confirmed by the phase shift of magneto-oscillations, related to the exceptional topology of the graphene band structure.

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Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Aruna Velamakanni, Rodney Ruoff, Luigi Colombo … (2009)

Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature.