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      Optical properties of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs (100) patterned substrates

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          Journal
          Solid-State Electronics
          Solid-State Electronics
          Elsevier BV
          00381101
          April 1994
          April 1994
          : 37
          : 4-6
          : 597-600
          Article
          10.1016/0038-1101(94)90255-0
          0f8307c7-3cd3-46db-9736-a0b5152e24fe
          © 1994

          https://www.elsevier.com/tdm/userlicense/1.0/

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