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      Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors

      , , , , ,
      Applied Physics Letters
      AIP Publishing

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          Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

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            Submillimeter EPR evidence for the As antisite defect in GaAs

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              Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual-Enthalpies of Isolated Antisite Defects in Zinc-Blende and Wurtzite Type Semiconductors

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                February 15 1982
                February 15 1982
                : 40
                : 4
                : 342-344
                Article
                10.1063/1.93092
                0ba194ac-542f-4772-a9ff-27e203b7803a
                © 1982
                History

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