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Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition
J.-F. Damlencourt ,
O. Renault ,
D. Samour ,
A.-M. Papon ,
C. Leroux ,
F. Martin ,
S. Marthon ,
M.-N. Séméria ,
X. Garros
October 2003
October 2003
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