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      Thickness-dependent Raman spectra, transport properties and infrared photoresponse of few-layer black phosphorus

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          Abstract

          The thickness-dependent Raman spectra, transport properties and photoresponse (from the visible light up to the communication band) of few-layer black phosphorus were studied systematically.

          Abstract

          The crystalline thin layer of black phosphorus (BP) has emerged as a new category of two-dimensional (2D) materials very recently, due to its tunable direct bandgap, promising physical properties, and potential applications in optoelectronics. Herein, the Raman scattering properties of the few layers of BP including the frequency shift and the intensity of the A1g, B 2g and A2g modes have been studied in detail and they show obvious dependence on thickness and light polarization. The optoelectronic performances of few-layer black phosphorus including field-effect properties and photosensitivity to laser light with different wavelengths are also investigated. The optoelectronic parameters including the current modulation, mobility, photoresponsivity and response time vary distinctly with the layer thickness. At room temperature, the obvious bipolar transport properties are obtained (with the hole and electron mobility as high as 240 and 2 cm 2 V −1 s −1, respectively) in the thicker (15 nm) BP devices, while the thinner (9 nm) BP only shows P-type transportation. The photoresponsivity of BP devices under different laser light illumination reaches several tens of mA W −1, which demonstrates their excellent photo-responsive properties and broadband detection. The thinner (9 nm) BP shows a high photoresponsivity of 64.8 mA W −1 at the communication band of 1550 nm, which is much larger than that of the thicker sample. Our findings reveal that the charge transport and infrared photo-response properties of BP are excellent, and diverse and can be intentionally designed through the thickness control. Such results also suggest BP's great potential in nanoelectronic devices and photodetection from the visible light up to the communication band (infrared light).

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          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            The rise of graphene

            Graphene is a rapidly rising star on the horizon of materials science and condensed matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed matter physics, where quantum relativistic phenomena, some of which are unobservable in high energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.
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              Graphene Photonics and Optoelectronics

              The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultra-wide-band tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light emitting devices, to touch screens, photodetectors and ultrafast lasers. Here we review the state of the art in this emerging field.
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                Author and article information

                Journal
                JMCCCX
                Journal of Materials Chemistry C
                J. Mater. Chem. C
                Royal Society of Chemistry (RSC)
                2050-7526
                2050-7534
                2015
                2015
                : 3
                : 42
                : 10974-10980
                Affiliations
                [1 ]State Key Laboratory on Integrated Optoelectronics
                [2 ]Institute of Semiconductors
                [3 ]Chinese Academy of Sciences
                [4 ]Beijing 100083
                [5 ]China
                [6 ]State Key Laboratory for Superlattices and Microstructures
                Article
                10.1039/C5TC01809A
                0a059874-6d33-429d-9318-c17888bf2f32
                © 2015
                History

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