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The mechanism of the enhancement of divacancy production by oxygen during electron irradiation of silicon. II. Computer modeling
January 1983
January 1983
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Most cited references13
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Defects in Irradiated Silicon. II. Infrared Absorption of the Si-\(A\)Center
R. MCDONALD, J. W. Corbett, G. Watkins … (1961)
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EPR Observation of the Isolated Interstitial Carbon Atom in Silicon
G. Watkins, K. L. Brower (1976)
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Production of Divacancies and Vacancies by Electron Irradiation of Silicon
G. Watkins, J. W. Corbett (1965)