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      Power p–i–n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery

      Author(s): ,   ,
      Publication date Created:
      Publication date (Print):
      Journal: Microelectronics Reliability
      Publisher: Elsevier BV

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          Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques

          P. Hazdra, J Vobecky, K. Brand (2002)
          Article 0 comments Cited 7 times – based on 0 reviews     Review now
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            Improved recovery of fast power diodes with self-adjusting p emitter efficiency

            H. Schlangenotto, H. Maeder, F. Sawitzki … (1989)
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              Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon

              P Leveque, A Hallén, P Pellegrino … (2001)
              Article 0 comments Cited 7 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Microelectronics Reliability
                Abbreviated Title: Microelectronics Reliability
                Publisher: Elsevier BV
                ISSN (Print): 00262714
                Publication date Created: January 2003
                Publication date (Print): January 2003
                Volume: 43
                Issue: 1
                Pages: 81-87
                Article
                DOI: 10.1016/S0026-2714(02)00268-8
                SO-VID: 08ecc26a-5163-4ec7-9fb2-6a22b7c62506
                Copyright © © 2003
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                http://www.elsevier.com/tdm/userlicense/1.0/

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