High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

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Journal

Title: Chemical Reviews

Abbreviated Title: Chem. Rev.

Publisher: American Chemical Society (ACS)

ISSN (Print): 0009-2665

ISSN (Electronic): 1520-6890

Publication date Created: May 29 2018

Publication date Created: June 13 2018

Publication date (Electronic): May 22 2018

Publication date (Print): June 13 2018

Volume: 118

Issue: 11

Pages: 5690-5754

Affiliations

[1 ]Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States

[2 ]Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren’ai Road, Suzhou 215123, China

[3 ]Department of Chemistry, Texas A&M University at Qatar, PO Box 23874, Doha, Qatar

[4 ]Flexterra Corporation, 8025 Lamon Avenue, Skokie, Illinois 60077, United States

Article

DOI: 10.1021/acs.chemrev.8b00045

PubMed ID: 29785854

SO-VID: 0665862b-8b48-4470-bdbd-f2b39ee94c94

License:

http://pubs.acs.org/page/policy/authorchoice_termsofuse.html

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