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      CMOS scaling into the nanometer regime

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          Design of ion-implanted MOSFET's with very small physical dimensions

          R.H. Dennard, F.H. Gaensslen, V.L. Rideout … (1974)
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            Self-Consistent Results forn-Type Si Inversion Layers

            Frank Stern (1972)
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              Trap creation in silicon dioxide produced by hot electrons

              J. Stasiak, D. DiMaria (1989)
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                Author and article information

                Journal
                Title: Proceedings of the IEEE
                Abbreviated Title: Proc. IEEE
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 00189219
                Publication date (Print): April 1997
                Volume: 85
                Issue: 4
                Pages: 486-504
                Article
                DOI: 10.1109/5.573737
                SO-VID: 05758e01-2d81-4386-a789-89ac0e575116
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