0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time

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Most cited references 14

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Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and Germanium

R Faulkner (1969)

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Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes

D Wilson, G Feher (1961)

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Shallow Impurity States in Silicon and Germanium

W. Kohn (1957)

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Author and article information

Journal

Title: Journal of Physics C: Solid State Physics

Abbreviated Title: J. Phys. C: Solid State Phys.

Publisher: IOP Publishing

ISSN (Print): 0022-3719

Publication date Created: September 20 1985

Publication date (Print): September 20 1985

Publication date (Electronic): November 23 2000

Volume: 18

Issue: 26

Pages: L795-L801

Article

DOI: 10.1088/0022-3719/18/26/005

SO-VID: 05722cb9-40a9-42b0-a161-bf1874123f37

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