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      Effect of oxygen on the optoelectronic properties of amorphous hydrogenated silicon

      , , , ,
      Physical Review B
      American Physical Society (APS)

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          Infrared Spectrum and Structure of Hydrogenated Amorphous Silicon

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            Optical constants of rf sputtered hydrogenated amorphous Si

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              The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniques

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                November 1981
                November 15 1981
                : 24
                : 10
                : 5907-5912
                Article
                10.1103/PhysRevB.24.5907
                054144ff-329c-4056-b4b1-b59cbd110216
                © 1981

                http://link.aps.org/licenses/aps-default-license

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