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      Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene

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          Abstract

          When two sheets of graphene are stacked at a small twist angle, the resulting flat superlattice minibands are expected to strongly enhance electron-electron interactions. Here we present evidence that near three-quarters (3/4) filling of the conduction miniband these enhanced interactions drive the twisted bilayer graphene into a ferromagnetic state. In a narrow density range around an apparent insulating state at 3/4, we observe emergent ferromagnetic hysteresis, with a giant anomalous Hall (AH) effect as large as 10.4 kΩ and indications of chiral edge states. Surprisingly, the magnetization of the sample can be reversed by applying a small DC current. Although the AH resistance is not quantized and dissipation is significant, our measurements suggest that the system may be an incipient Chern insulator.

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          Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride.

          Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics of the low-density region at the Dirac point has been difficult because of disorder that leaves the graphene with local microscopic electron and hole puddles. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance. Here we use scanning tunnelling microscopy to show that graphene conforms to hBN, as evidenced by the presence of Moiré patterns. However, contrary to predictions, this conformation does not lead to a sizeable band gap because of the misalignment of the lattices. Moreover, local spectroscopy measurements demonstrate that the electron-hole charge fluctuations are reduced by two orders of magnitude as compared with those on silicon oxide. This leads to charge fluctuations that are as small as in suspended graphene, opening up Dirac point physics to more diverse experiments.
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            Substrate-induced band gap in graphene on hexagonal boron nitride:Ab initiodensity functional calculations

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              Global phase diagram in the quantum Hall effect

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                Author and article information

                Journal
                Science
                Science
                American Association for the Advancement of Science (AAAS)
                0036-8075
                1095-9203
                July 25 2019
                : eaaw3780
                Article
                10.1126/science.aaw3780
                31346139
                03730531-5774-49f5-9fea-52e85b4a2fa4
                © 2019
                History

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